Infineon BSC072N03LDG 30V N-Channel MOSFET Datasheet and Application Review

The Infineon BSC072N03LDG is a state-of-the-art N-Channel MOSFET engineered using Infineon’s advanced OptiMOS™ technology. Designed for low voltage applications up to 30V, this power MOSFET excels in delivering high efficiency and robust performance in a compact package. It is particularly suited for demanding switch-mode power supplies, motor control circuits, and synchronous rectification in DC-DC converters.

A key highlight of the BSC072N03LDG is its exceptionally low on-state resistance (RDS(on)) of just 1.8 mΩ (max) at 10 V. This ultra-low resistance significantly reduces conduction losses, leading to higher system efficiency and lower heat generation. Combined with a continuous drain current (ID) rating of 70 A, this MOSFET can handle high power levels while maintaining thermal stability.

The device is housed in a PG-TDSON-8 package, which offers an optimal balance between compact footprint and excellent thermal performance. This makes it highly suitable for space-constrained applications such as server power supplies, telecom hardware, and automotive systems. The package is designed for effective heat dissipation, supporting high power density designs.

Furthermore, the BSC072N03LDG features low gate charge (Qg) and fast switching characteristics, which are critical for high-frequency operation. These attributes help minimize switching losses and improve overall performance in power conversion stages. The MOSFET also boasts a strong avalanche ruggedness and is qualified according to the highest automotive standards, ensuring reliability under harsh operating conditions.

ICGOOODFIND: The Infineon BSC072N03LDG stands out as a high-performance power MOSFET, offering an ideal combination of ultra-low RDS(on), high current capability, and superior switching efficiency. It is an excellent choice for designers seeking to enhance power density and energy efficiency in modern electronic systems.

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Keywords:

OptiMOS™, Low RDS(on), Power Efficiency, Synchronous Rectification, High Current Capability