Infineon SPA17N80C3: A High-Performance Super Junction MOSFET for Advanced Power Applications

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution are Super Junction (SJ) MOSFETs, and Infineon's SPA17N80C3 stands out as a premier component engineered to meet the rigorous demands of modern high-performance applications.

This MOSFET is designed around the advanced CoolMOS™ C3 super junction technology, a hallmark of Infineon's expertise. It is rated for 800 V drain-source voltage and 17 A continuous drain current, making it exceptionally suited for operation in harsh electrical environments. A key metric for any switching device is its on-state resistance, and the SPA17N80C3 excels with an ultra-low RDS(on) of just 0.19 Ω. This low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation.

The benefits extend beyond static performance. The device is optimized for fast switching capabilities, which is crucial for increasing switching frequencies in designs like switched-mode power supplies (SMPS). Operating at higher frequencies allows for the use of smaller passive components like inductors and transformers, thereby significantly increasing the overall power density of the end application. Furthermore, the SPA17N80C3 boasts an exceptionally robust body diode with excellent reverse recovery characteristics. This ruggedness enhances the device's reliability in circuits where hard commutation is unavoidable, such as in power factor correction (PFC) stages and half-bridge configurations.

The combination of high voltage capability, low switching losses, and a strong intrinsic diode makes this MOSFET an ideal choice for a wide array of advanced power applications. It is particularly effective in:

Server and Telecom Power Supplies: Where efficiency standards like 80 Plus Titanium are mandatory.

Industrial Power Systems: Demanding robustness and long-term reliability.

Photovoltaic Inverters: Requiring high voltage handling and efficiency.

Charging Infrastructure for E-Mobility: Needing high power density and fast switching.

ICGOOODFIND: The Infineon SPA17N80C3 embodies the cutting-edge of Super Junction MOSFET technology, offering a powerful blend of high voltage resilience, ultra-low conduction losses, and fast switching performance. It is a cornerstone component for designers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords:

Super Junction MOSFET

High Efficiency

Ultra-Low RDS(on)

Fast Switching

Power Density