Microchip TC4428AEOA713 High-Speed MOSFET Driver: Datasheet, Application Circuit, and Key Features

In modern power electronics and switching applications, the ability to quickly and reliably drive the gate of a power MOSFET is critical for efficiency and performance. The Microchip TC4428AEOA713 is a high-speed, high-current MOSFET driver designed specifically to meet this challenge. This robust driver is capable of sourcing and sinking significant current, making it an ideal choice for applications such as switch-mode power supplies (SMPS), motor controllers, and pulse transformers.

Key Features

The TC4428AEOA713 stands out due to its impressive electrical characteristics. It is a non-inverting driver, which simplifies logic interface design. A core strength of this IC is its high peak output current of 1.5A, enabling it to rapidly charge and discharge the large gate capacitances of power MOSFETs and IGBTs. This results in very fast switching times, typically 25 ns for rise and fall times, which minimizes switching losses and improves overall system efficiency.

The device operates over a wide voltage range from 4.5V to 18V, providing flexibility for interfacing with various logic levels and bus voltages. It is also designed to be highly resilient, featuring latch-up protection and the ability to withstand up to 500 mA of reverse output current. Furthermore, its inputs are compatible with both TTL and CMOS logic levels, down to 3V, ensuring easy integration into digital control systems.

Application Circuit

A typical application circuit for the TC4428AEOA713 is straightforward yet highly effective. The core configuration involves connecting the power supply (Vdd, typically between 4.5V and 18V) to pin 6 and ground to pin 3. The input signal from a microcontroller or PWM controller is applied to pin 2. The output from pin 7 is then connected directly to the gate of the MOSFET being driven.

Two critical components in this circuit are:

1. A gate resistor (R_gate): Placed in series with the output and the MOSFET gate, this resistor helps control the peak charge/discharge current, dampen ringing, and prevent oscillations.

2. A bypass capacitor (C_bypass): A low-ESR (Equivalent Series Resistance) ceramic capacitor (typically 1µF to 10µF) placed as close as possible between the Vdd and GND pins is essential to provide the high peak currents required during switching transients and to stabilize the supply voltage.

Datasheet Overview

The manufacturer's datasheet is the ultimate source of information for designing with this component. It provides absolute maximum ratings, detailed electrical characteristics, and timing diagrams. Key sections to consult include the "Electrical Specifications" table for guaranteed performance metrics and the "Typical Performance Graphs" which illustrate behavior under various conditions like temperature and supply voltage. The datasheet also offers invaluable layout guidelines to minimize parasitic inductance, which is crucial for maintaining stability and achieving the advertised high-speed performance.

ICGOODFIND Summary

ICGOODFIND: The Microchip TC4428AEOA713 is a robust and versatile high-speed MOSFET driver. Its high peak current output, fast switching capability, and wide operating voltage range make it an excellent choice for engineers designing high-efficiency power stages. Its resilience and logic-level compatibility further simplify its implementation in a wide array of demanding applications.

Keywords: MOSFET Driver, High-Speed Switching, 1.5A Peak Current, Gate Drive IC, Non-Inverting Driver.