**The HMC916LP3ETR: A High-Performance MMIC Amplifier for Ka-Band and Millimeter-Wave Applications**

Operating from **18 GHz to 32 GHz**, the HMC916LP3ETR is a gallium arsenide-based pseudomorphic high-electron-mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) designed as a medium power amplifier. Its combination of wide bandwidth, high efficiency, and compact form factor makes it an ideal solution for advanced RF and microwave systems.

Housed in a **leadless 3x3 mm QFN package**, this amplifier is particularly suited for space-constrained applications including airborne radar, satellite transceivers, and portable test equipment. The device provides a **typical small signal gain of 16 dB** and delivers a **saturated output power (Psat) of +24 dBm** with power-added efficiency reaching **up to 25%**. These characteristics ensure strong signal integrity and minimal wasted energy—critical for power-sensitive and thermally constrained designs.

The amplifier operates on a **single positive supply voltage of +4V** and typically consumes **180 mA of current**. It incorporates **integrated voltage regulation**, ensuring consistent performance across temperature fluctuations—a key feature for military, aerospace, and outdoor communication systems where environmental stability is essential.

Additionally, the HMC916LP3ETR is **internally matched to 50 Ohms** at both RF input and output ports, significantly simplifying PCB layout and system integration. This makes the device especially attractive for use in microwave radio links, test and measurement setups, satellite communication systems, and radar applications.

Engineered for high reliability, this MMIC amplifier includes **robust ESD protection** and is designed to perform under demanding operational conditions, offering both durability and repeatability in mission-critical scenarios.

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**ICGOODFIND**:

The HMC916LP3ETR stands out as a high-efficiency, broadband MMIC amplifier optimized for Ka-band and millimeter-wave applications. Its combination of gain, output power, thermal stability, and compact packaging makes it an excellent choice for next-generation communication and sensing systems.

**Keywords**:

MMIC Amplifier, Ka-Band, pHEMT, Power-Added Efficiency, QFN Package