Infineon IPB200N25N3G 200V 25mΩ StrongIRFET Power MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electrical systems places immense demands on power switching components. At the heart of many advanced power conversion designs, from server SMPS and telecom bricks to motor drives and renewable energy inverters, lies the power MOSFET. The Infineon IPB200N25N3G stands out as a premier solution, engineered to meet these challenges head-on with its exceptional blend of low losses, robust performance, and high reliability.
This device is a 200V N-channel MOSFET featuring an ultra-low maximum on-state resistance (RDS(on)) of just 25mΩ at 10V. This remarkably low RDS(on) is a primary factor in achieving high efficiency, as it directly minimizes conduction losses during operation. When a MOSFET is fully turned on, it behaves like a small resistor; the lower this resistance, the less power is dissipated as heat. This allows designers to push for higher output currents or reduce the need for extensive thermal management, leading to more compact and cost-effective systems.
A key technology enabling this performance is Infineon's advanced StrongIRFET™ process. This technology optimizes the figure of merit (FOM – the product of RDS(on) and gate charge, QG) to deliver superior switching characteristics. The IPB200N25N3G exhibits low gate and output charges, which translates to reduced switching losses. This is particularly critical in high-frequency switching applications, where losses during the transition phases (turn-on and turn-off) can become a dominant factor in overall efficiency. The low QG also simplifies drive circuit design, reducing the demands on the gate driver IC.
Housed in the TO-263-3 (D2PAK) surface-mount package, this MOSFET offers an excellent power-to-footprint ratio. The package is designed for effective power dissipation, facilitating the transfer of heat from the silicon die to the PCB. This makes it an ideal choice for space-constrained applications that still require high current handling capability. Furthermore, the 200V voltage rating provides a comfortable safety margin for popular 48V input bus and 100-120V AC line applications, enhancing system robustness and longevity.
The device is also characterized by its fast and rugged intrinsic body diode. This feature is vital in bridge topology applications like synchronous rectification and motor control circuits, where the body diode conducts during dead time. The diode's good reverse recovery performance helps to minimize associated losses and potential voltage spikes, contributing to cleaner switching and improved electromagnetic compatibility (EMC).
ICGOOODFIND: The Infineon IPB200N25N3G is a high-performance StrongIRFET™ Power MOSFET that sets a high bar for efficiency in power conversion. Its ultra-low 25mΩ RDS(on), optimized switching dynamics, and robust package make it an outstanding choice for designers aiming to maximize performance in demanding high-current, high-frequency applications.
Keywords: Power MOSFET, High Efficiency, Low RDS(on), StrongIRFET, Switching Performance.
