Infineon BSC0921NDI OptiMOS™ 5 Power Transistor: Datasheet, Features, and Application Overview
The Infineon BSC0921NDI is a benchmark N-channel power MOSFET from the advanced OptiMOS™ 5 technology family, designed to set new standards in efficiency and power density for a wide range of modern power conversion applications. This surface-mount device combines ultra-low on-state resistance with exceptional switching performance, making it an ideal choice for designers striving to maximize system efficiency and minimize energy losses.
Key Features and Electrical Characteristics
At the core of the BSC0921NDI's performance is its remarkably low typical on-state resistance (RDS(on)) of just 1.0 mΩ (max. 1.3 mΩ) at a gate-source voltage of 10 V. This minimal resistance is crucial for reducing conduction losses, which directly translates into higher efficiency and less heat generation. The device is rated for a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of up to 100 A at a case temperature of 25°C, showcasing its ability to handle high power in a compact D²PAK (TO-263) package.
A standout feature of the OptiMOS™ 5 generation is its superior figure-of-merit (FOM, RDS(on) x QG), which indicates an optimal balance between conduction and switching losses. The low gate charge (QG) ensures fast switching transitions, reducing switching losses and enabling operation at higher frequencies. This allows for the design of smaller, more compact magnetic components and filters.
Application Overview
The BSC0921NDI is engineered for high-performance applications where efficiency and reliability are paramount. Its primary use cases include:
Synchronous Rectification in Switch-Mode Power Supplies (SMPS): It is exceptionally well-suited for use in the secondary side of AC-DC power supplies for servers, telecom equipment, and industrial systems, significantly improving overall efficiency.
Motor Control and Drives: The MOSFET's high current handling and robust performance make it perfect for driving motors in industrial automation, robotics, and automotive systems.
DC-DC Converters: It is an excellent choice for high-current, non-isolated point-of-load (POL) converters in computing and data center applications, enabling higher power density designs.
Battery Management and Protection: Its low RDS(on) minimizes voltage drop and power loss in discharge path management circuits, which is critical for power tools and e-mobility solutions.
Datasheet Essentials
The product datasheet provides all necessary information for design-in, including:
Absolute Maximum Ratings: Defining the operational boundaries for voltage, current, and temperature.
Static and Dynamic Electrical Characteristics: Detailed tables and graphs for parameters like RDS(on), gate threshold voltage, capacitance values, and switching times.
Thermal Characteristics: Including junction-to-case thermal resistance, which is vital for thermal management and heatsink design.
Safe Operating Area (SOA) Graphs: Illustrating the current and voltage limits within which the device can operate safely without damage.
ICGOOODFIND: The Infineon BSC0921NDI OptiMOS™ 5 Power Transistor stands out as a top-tier solution for high-efficiency power conversion. Its industry-leading low RDS(on) and excellent switching characteristics empower engineers to push the limits of power density and thermal performance in demanding applications like server PSUs, POL converters, and motor drives, making it a highly recommended component for next-generation designs.
Keywords: OptiMOS™ 5, Low RDS(on), Power MOSFET, Synchronous Rectification, High Efficiency.
