Infineon IRLML2502TRPBF: A Comprehensive Technical Overview of the N-Channel HEXFET Power MOSFET

The Infineon IRLML2502TRPBF is a benchmark N-Channel Power MOSFET that exemplifies the performance and efficiency achievable with advanced HEXFET technology. Designed for a wide array of power management applications, this surface-mount device combines low on-state resistance with high switching speed, making it an ideal choice for space-constrained, high-efficiency designs.

Key Electrical Characteristics and Performance

At the heart of the IRLML2502's performance is its exceptionally low drain-source on-state resistance (RDS(on)). With a maximum of 45 mΩ at a gate-source voltage (VGS) of 4.5 V and 80 mΩ at 2.5 V, this MOSFET minimizes conduction losses, leading to higher efficiency and reduced heat generation. This low threshold drive capability is particularly crucial for modern circuits powered by low-voltage microcontrollers and battery-operated devices.

The device is rated for a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 4.3 A at 70°C, suiting it for a broad range of low-voltage applications. Its compact SOT-23 packaging offers a powerful solution in a minimal footprint. Furthermore, its low gate charge (QG typical 11 nC) and fast switching characteristics ensure minimal switching losses, which is paramount in high-frequency circuits such as switch-mode power supplies (SMPS) and DC-DC converters.

Advanced HEXFET Technology

The IRLML2502 is built upon Infineon's proprietary HEXFET technology. This vertical MOSFET structure, characterized by its hexagonal cell pattern, provides a high cell density. This results in the very low RDS(on) and superior switching performance for which the device is known. The technology ensures robust operation and high reliability under demanding conditions.

Application Spectrum

The combination of its electrical properties and SOT-23 package makes the IRLML2502TRPBF incredibly versatile. Its primary applications include:

Load Switching: Power management in portable devices, laptops, and consumer electronics.

DC-DC Conversion: Serving as the main switching element in buck, boost, and buck-boost converters.

Motor Control: Driving small DC motors in automotive subsystems, robotics, and industrial controls.

Power Management Functions: Battery charging circuits, power distribution switches, and PWM controllers.

Thermal and Packaging Considerations

Housed in a space-saving SOT-23 package, the device is designed for automated assembly processes. While its small size is an advantage for PCB real estate, effective thermal management is critical. Designers must ensure adequate copper pour on the PCB to act as a heat sink to dissipate power losses and maintain a safe operating junction temperature.

Conclusion

ICGOOODFIND: The Infineon IRLML2502TRPBF stands out as a highly efficient and reliable N-Channel MOSFET, leveraging HEXFET technology to deliver an optimal balance of low on-resistance, fast switching speed, and compact form factor. It is an exemplary component for designers aiming to enhance efficiency and reduce the size of their low-voltage power systems.

Keywords:

1. Low RDS(on)

2. HEXFET Technology

3. Power MOSFET

4. DC-DC Conversion

5. SOT-23 Package