Infineon IPA60R099C6 CoolMOS™ Power MOSFET: Powering the Next Generation of High-Efficiency Designs

In the relentless pursuit of higher energy efficiency and power density across industries such as consumer electronics, industrial automation, and renewable energy, the choice of switching device is paramount. The Infineon IPA60R099C6 CoolMOS™ Power MOSFET stands out as a premier solution, engineered to meet the exacting demands of modern high-frequency, high-efficiency switching applications.

This MOSFET is part of Infineon’s revolutionary CoolMOS™ C6 series, which is built upon a superjunction (SJ) technology platform. The core achievement of this technology is its ability to drastically reduce the key limiting factor in power conversion: switching losses. The IPA60R099C6 boasts an exceptionally low figure-of-merit (R DS(on) x Q G), a critical indicator of performance. With a maximum drain-source on-state resistance (R DS(on)) of just 0.099 Ω and optimized gate charge (Q G), this device achieves an outstanding balance between conduction losses and switching losses. This translates directly into cooler operation, higher system reliability, and increased overall efficiency.

A key feature of the C6 family is its integrated fast body diode. This innovation significantly enhances the device's robustness in hard-switching topologies like power factor correction (PFC) circuits. The diode exhibits low reverse recovery charge (Q rr) and soft recovery characteristics, which minimizes voltage overshoot and electromagnetic interference (EMI). This allows designers to simplify their circuits, often reducing or eliminating the need for additional snubber networks, thereby saving space and cost.

The IPA60R099C6 is rated for 650 V drain-source voltage and a continuous drain current (I D) of 11.5 A at 100°C, making it exceptionally versatile. It is ideally suited for a wide array of applications, including:

Switch-Mode Power Supplies (SMPS) for servers and telecom equipment.

High-efficiency LLC resonant converters for lighting and TV power.

Solar inverters and energy storage systems.

Industrial motor drives and automation.

Furthermore, the device offers excellent dv/dt capability and is designed for ease of use, supporting faster switching frequencies that enable the use of smaller passive components like inductors and capacitors. This is crucial for achieving the next level of power density that modern compact designs require.

ICGOOODFIND: The Infineon IPA60R099C6 CoolMOS™ C6 MOSFET is a benchmark in power semiconductor technology, offering a superior blend of ultra-low losses, integrated diode robustness, and high switching speed. It is an enabling technology for designers aiming to push the boundaries of efficiency and power density in their next-generation power systems.

Keywords: High-Efficiency, Superjunction Technology, Low Switching Losses, Fast Body Diode, Power Density.