Infineon IPL60R085P7: A High-Performance 600V CoolMOS™ P7 Power Transistor

The Infineon IPL60R085P7 represents a significant advancement in high-voltage power MOSFET technology, leveraging Infineon’s state-of-the-art CoolMOS™ P7 series. Designed for demanding switching applications, this 600V transistor combines ultra-low effective dynamic losses with superior reliability, making it an ideal choice for modern power supplies, industrial drives, lighting systems, and renewable energy applications.

A key highlight of the IPL60R085P7 is its exceptionally low on-state resistance (RDS(on)) of just 85 mΩ, which minimizes conduction losses and enhances overall system efficiency. This is achieved through Infineon’s advanced superjunction technology, which allows for higher power density and thermal performance in a compact TO-220 package. The reduced switching losses further contribute to higher operating frequencies, enabling designers to create smaller, lighter, and more efficient power solutions.

Another standout feature is the device’s integrated fast body diode, which improves reverse recovery characteristics and ensures robust performance in hard-switching and inductive load environments. This makes the transistor particularly suitable for power factor correction (PFC) stages and resonant converters like LLC half-bridges, where efficiency and reliability are critical.

Moreover, the CoolMOS™ P7 technology incorporates enhanced ruggedness against avalanche and overvoltage conditions, providing an additional layer of protection in unpredictable operational scenarios. The combination of low electromagnetic interference (EMI) and high switching speed also simplifies filtering requirements, reducing both component count and system cost.

ICGOOODFIND:

The Infineon IPL60R085P7 stands out as a high-efficiency, high-reliability power MOSFET that addresses the evolving needs of modern electronic systems. Its optimized switching performance, thermal characteristics, and robustness make it a top-tier solution for next-generation power conversion applications.

Keywords:

CoolMOS™ P7, High Efficiency, Low RDS(on), Power Transistor, 600V MOSFET